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Germanium
High purity germanium crystals
Crystals are produced from very pure starting material. The material is purified by using zone refining in graphite and quartz boats, then grown into large single crystals using the Czochralski method.
Specification
| Growth process |
CZ |
| Diameter, mm |
40-100 |
| Length, mm |
as needed |
| Orientation |
<100> |
| Net impurity |
< (3-5) x 1010 |
| Mobility, cm2/V.s |
3.5 x 104 |
| EPD, cm-2 |
5 x 102 - 5 x 103 |
Doped germanium single crystals
Standard Specifications
|
Dopant |
Range of specific resistivity, nominal value, ohm.cm |
EPD (no more than), cm-2 |
Range of ingot diameter, mm |
Length (not more than), mm |
|
Sb |
15-45 |
5 x 103 |
28-35 |
50 |
|
Sb |
6-14 |
5 x 103 - 5 x 104 |
28-35 |
50 |
|
Sb |
0.1-5.5 |
5 x 103 - 1 x 104 |
28-35 |
50 |
|
Sb |
0.01-0.09 |
2 x 103 - 5 x 104 |
20-35 |
40 |
|
Sb |
0.004-0.009 |
5 x 104 |
20-35 |
40 |
|
Ga |
15-45 |
5 x 103 |
28-35 |
50 |
|
Ga |
6-14 |
5 x 103 |
28-35 |
50 |
|
Ga |
0.1-5.5 |
5 x 103 - 1 x 104 |
28-35 |
50 |
|
Ga |
0.01-0.09 |
2 x 103 - 5 x 104 |
20-35 |
40 |
|
Ga |
0.004-0.009 |
5 x 103 - 5 x 104 |
20-35 |
40 |
|
Ga |
0.002-0.003 |
5 x 103 - 5 x 104 |
20-35 |
40 |
|
Ga |
0.00045-0.001 |
5 x 104 |
20-35 |
40 |
|
P |
0.01-0.1 |
5 x 103 |
20-35 |
40 |
Deviation of diameter along an ingot does not exceed 4 mm. Orientation
<111>. |
Thin films and oxide layers
Ion implants
Etching
|